<strong>Effects of Al Content on Elastic Parameters of AlxGa1-xAs (0 ≤ x ≤ 1) Alloys</strong>
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Title Statement |
<strong>Effects of Al Content on Elastic Parameters of AlxGa1-xAs (0 ≤ x ≤ 1) Alloys</strong> |
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Added Entry - Uncontrolled Name |
Doghmane, Abdellaziz ; Laboratoire des Semi-conducteurs, Département de Physique, Faculté des Sciences, Université Badji-Mokhtar, Annaba Ouchtati, Amina ; Laboratoire des Semi-conducteurs, Département de Physique, Faculté des Sciences, Université Badji-Mokhtar, Annaba, B.P 12, DZ-23000 Algeria HADJOUB, Ilhem ; Ecole Supérieure des Technologies Industrielles, ESTI, Annaba, DZ-23000, Algeria. KHOUALDIA, Assia ; Laboratoire des Semi-conducteurs, Département de Physique, Faculté des Sciences, Université Badji-Mokhtar, Annaba, B.P 12, DZ-23000 Algeria. HADJOUB, Zahia ; Laboratoire des Semi-conducteurs, Département de Physique, Faculté des Sciences, Université Badji-Mokhtar, Annaba, B.P 12, DZ-23000 Algeria. |
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Uncontrolled Index Term |
Fundament; classical and quantum physics; applied physics AlxGa1-xAs, Elastic parameters, Acoustic microscopy, Acoustic signature, Reflection coefficient |
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Summary, etc. |
Elastic parameters of AlxGa1-xAs (0 ≤ x ≤ 1) alloys are numerically determined and analyzed on the basis of scanning acoustic microscopy technique. Thus, the dependence of Al concentrations, x, on all features of reflection coefficient and acoustic materials signatures (critical angles of reflected modes, spatial periods, peaks of FFT spectra and their corresponding wave velocities) has been considered, analyzed and discussed. It is found that as Al content increases several behaviors are obtained: (i) all critical angles of longitudinal, transverse and Rayleigh waves, decrease, (ii) all spatial periods increase and (ii) both Rayleigh and longitudinal wave velocities increase. Moreover, the variations of these parameters, P, were quantified and semi-empirical formulas were found to be of the form: P = c + ax + bx2; from these formulas, valuable information can be derived and may be useful for AlxGa1-xAs compositional characterization. |
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Publication, Distribution, Etc. |
Indian Journal of Pure & Applied Physics (IJPAP) 2022-02-16 10:24:46 |
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Electronic Location and Access |
application/pdf http://op.niscair.res.in/index.php/IJPAP/article/view/54664 |
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Data Source Entry |
Indian Journal of Pure & Applied Physics (IJPAP); ##issue.vol## 60, ##issue.no## 2 (2022): Indian Journal of Pure & Applied Physics |
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Language Note |
en |
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Nonspecific Relationship Entry |
http://op.niscair.res.in/index.php/IJPAP/article/download/54664/465576847 |
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Terms Governing Use and Reproduction Note |
Except where otherwise noted, the Articles on this site are licensed under Creative Commons License: CC Attribution-Noncommercial-No Derivative Works 2.5 India © 2015. The Council of Scientific & Industrial Research, New Delhi. |
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