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A Dielectrically Modulated AlGaN/InN/GaN Nanoelectronic High Electron Mobility Transistor based Biosensor for Protein Detection

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Title A Dielectrically Modulated AlGaN/InN/GaN Nanoelectronic High Electron Mobility Transistor based Biosensor for Protein Detection
 
Creator Kalita, Sanjib
Mallikarjuna, Kethepalli
 
Subject Protein
Dielectric constant
Transconductance
Sensitivity
Drain current.
 
Description 150-156
In this work, a high electron mobility transistor (HEMT) based biosensor is designed to detect the virus-protein. Conduction band engineering of the biosensor is studied. DC and RF properties of the designed biosensor are studied. Sensitivity of the biosensor is studied corresponding to electric field, surface potential, drain current, transconductance, and current gain cut-off frequency. Sufficient sensitivity is obtained corresponding to each electrical parameter to detect the virus-protein. This work may be helpful to design and experimentally fabricate the HEMT based biosensor.
 
Date 2022-03-04T11:01:08Z
2022-03-04T11:01:08Z
2022-02
 
Type Article
 
Identifier 0975-0959 (Online); 0301-1208 (Print)
http://nopr.niscair.res.in/handle/123456789/59297
 
Language en
 
Publisher NIScPR-CSIR, India
 
Source IJPAP Vol.60(02) [February 2022]