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Structural and Optoelectronic Characterization of Synthesized Undoped CZTS and Cd-doped CZTS Thin Films

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Title Structural and Optoelectronic Characterization of Synthesized Undoped CZTS and Cd-doped CZTS Thin Films
 
Creator Migdadi, A B
Alzoubi, F Y
Al-Khateeb, H M
Alqadi, M K
 
Subject CZTS thin film
Cd-doped CZTS
sol-gel method
density of state
dispersion parameters
high-frequency dielectric constant
Plasma frequency
relaxation time
 
Description 138-149
Copper zinc tin sulfide (CZTS) thin films with different doping ratios of Cadmium (Cd) were successfully fabricated
using the sol-gel method by dip-coating technique. The surface morphology, the crystal structure properties as well the
optical properties of undoped CZTS thin film and Cd- doped CZTS thin films were investigated using scanning electron
microscopy (SEM), x-ray diffraction (XRD), and UV-Vis spectrophotometer. SEM micrographs demonstrated that the size
and morphology of the particles improve due to increasing the Cd concentration in CZTS thin films. In addition, the XRD
patterns exhibited the crystalline nature for CZTS thin films with kesterite crystal structure and showed improvement in
some crystal structure properties such as crystal size and volume of unit cell with the incorporation of Cd into CZTS thin
films. Moreover, optical bandgap energy 𝐸τ€―š, in addition to several optoelectronic parameters such as refractive index (𝑛),
extinction coefficient (π‘˜), dispersion energy, high-frequency dielectric constant, density of state, Plasma frequency, and
relaxation time have been estimated. Remarkably, the bandgap energy of CZTS thin films ranges from 1.594 𝑒𝑉 to 1.529 𝑒𝑉
depending on the Cd content; it increases with increases the concentration of Cd into CZTS thin films.
 
Date 2022-03-04T11:05:58Z
2022-03-04T11:05:58Z
2022-02
 
Type Article
 
Identifier 0975-0959 (Online); 0301-1208 (Print)
http://nopr.niscair.res.in/handle/123456789/59298
 
Language en
 
Publisher NIScPR-CSIR, India
 
Source IJPAP Vol.60(02) [February 2022]