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Effect of RF Power on Physical and Electrical Properties of Al-doped ZnO Thin Films

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Title Effect of RF Power on Physical and Electrical Properties of Al-doped ZnO Thin Films
 
Creator Rana, Vijay S
Purohit, Laxmi P
Sharma, Gaurav
Singh, Satendra Pal
Sharma, Sanjeev K
 
Subject AZO thin films
RF power
PTFE substrates
Physical
Electrical properties
 
Description 246-253
We deposited Al-doped zinc oxide (AZO) thin films on PTFE flexible substrate by RF sputtering with respect to the
power in the range 125-155 W. XRD-pattern showed the preferred c-axis (002) orientation regardless the rf-power, which
confirmed the hexagonal wurtzite crystal structure. The dislocation density (δ), and strain (ε) of AZO thin films were
determined to be 1.861015-0.741015 m-2, and 85.6×10-3-54.0×10-3, respectively. The AZO film deposited at 135 W showed
the smooth and uniform microstructure, which is the highest intensity of XRD-pattern due to smaller grain size. The
refractive index (n) increased from 2.24 to 2.34, while the bandgap (Eg), and urbach tail (Eu) decreased from 3.66 to 3.31 eV
and 0.33 to 0.22 eV as the RF power increased from 125 to 155 W. The sheet resistance and figure of merit (FOM) of AZO
thin films were observed to be the lowest 53.36 /cm and 5.17  10-10 -1 for the sample 135 W.
 
Date 2022-04-07T11:13:35Z
2022-04-07T11:13:35Z
2022-03
 
Type Article
 
Identifier 0975-0959 (Online); 0301-1208 (Print)
http://nopr.niscair.res.in/handle/123456789/59493
 
Language en
 
Publisher NIScPR-CSIR, India
 
Source IJPAP Vol.60(03) [March 2022]