Record Details

<strong>A Simple Analytical Model of a GaN MODFET to Study its DC and RF Performance</strong>

Online Publishing @ NISCAIR

View Archive Info
 
 
Field Value
 
Authentication Code dc
 
Title Statement <strong>A Simple Analytical Model of a GaN MODFET to Study its DC and RF Performance</strong>
 
Added Entry - Uncontrolled Name Dutta, Sutanu
Shit, Prabir Kumar
Pal, Radha Raman
PRG OF VIDYASAGAR UNIVERSITY
 
Uncontrolled Index Term Semiconductor Device; Field Effect Transistors
GaN MODFET; Theoritical Modeling; DC Characteristics; RF Characteristics; Threshold Voltage
 
Summary, etc. This work presents a theoretical study of a GaN MODFET considering accurate velocity field relation of GaN for a wide range of electric field. The analytical expression of different DC parameters such as drain current, mutual conductance and drain conductance of the device has been derived and their variation over different field regions has been investigated. This work has also been extended to study the RF parameters like cut-off frequency and maximum operating frequency of the device. The threshold voltage of the device is also derived and studied in terms of the thickness of the doped AlGaN layer and mole fraction of AlGaN. The mathematical model presented here is calibrated with the experimentally available results reported earlier and a good agreement has been observed.
 
Publication, Distribution, Etc. Indian Journal of Pure & Applied Physics (IJPAP)
2022-05-10 10:37:11
 
Electronic Location and Access application/pdf
http://op.niscair.res.in/index.php/IJPAP/article/view/60815
 
Data Source Entry Indian Journal of Pure & Applied Physics (IJPAP); ##issue.vol## 60, ##issue.no## 5 (2022): Indian Journal of Pure & Applied Physics
 
Language Note en
 
Nonspecific Relationship Entry http://op.niscair.res.in/index.php/IJPAP/article/download/60815/465599033
http://op.niscair.res.in/index.php/IJPAP/article/download/60815/465599034
http://op.niscair.res.in/index.php/IJPAP/article/download/60815/465599036
http://op.niscair.res.in/index.php/IJPAP/article/download/60815/465599037
http://op.niscair.res.in/index.php/IJPAP/article/download/60815/465599038
http://op.niscair.res.in/index.php/IJPAP/article/download/60815/465599039
http://op.niscair.res.in/index.php/IJPAP/article/download/60815/465599040
http://op.niscair.res.in/index.php/IJPAP/article/download/60815/465599041
http://op.niscair.res.in/index.php/IJPAP/article/download/60815/465599042
http://op.niscair.res.in/index.php/IJPAP/article/download/60815/465599043
http://op.niscair.res.in/index.php/IJPAP/article/download/60815/465599045
http://op.niscair.res.in/index.php/IJPAP/article/download/60815/465599046
http://op.niscair.res.in/index.php/IJPAP/article/download/60815/465599047
 
Terms Governing Use and Reproduction Note Except where otherwise noted, the Articles on this site are licensed under Creative Commons License: CC Attribution-Noncommercial-No Derivative Works 2.5 India © 2015. The Council of Scientific &amp; Industrial Research, New Delhi.