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<strong>Femto Seconds Laser Based Efficient THz Generation from Different Temperature Annealed CdTe Thin Films and Effects of Carrier Concentration and Phase Transition on Efficiency of Generation</strong>

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Title Statement <strong>Femto Seconds Laser Based Efficient THz Generation from Different Temperature Annealed CdTe Thin Films and Effects of Carrier Concentration and Phase Transition on Efficiency of Generation</strong>
 
Added Entry - Uncontrolled Name M., Mahendar ; University of Hyderabad
N, VamsiKrishna R; University of Hyderabad
Chaudhary, Anil Kumar; University of Hyderabad
Defense Research and Development Organization (DRDO), Ministry of Defence, Govt. of India for financial support under the grant No. DRDO/18/1801/2016/01038: ACRHEM-Phase-III
 
Uncontrolled Index Term THz generation , thin films
Cadmium Telluride; Thin films; Tera-Hertz Generation; Carrier concentration; X ray Analysis; Phase transition
 
Summary, etc. The paper reports the thermal evaporation based growth process of CdTe thin films on glass substrates. These films were annealed between room temperature to 200, 300 and 400 oC, respectively. The XRD characterization of these films revealed the change in crystalline phase from cubic to triclinic above 200 oC. Finally, these films were subjected to 800 nm wavelength of 35fs pulsed obtained from Ti: sapphire amplifier at 1kHz repetition rate. The incident power of the laser was focused and tuned between 150-350 mW range and generated THz signals were recorded using calibrated Pyroelectric detector at 22.5 Hz frequency. The highest power of the THz signal was 80nW for 200 oC annealed film with respect to incident power of 300mW. The highest efficiency of THz signal was of the order of 3.11E-5%. We have also explained the effect of carrier concentration and phase transition with respect to different annealed temperature for efficient generation of THz signal.
 
Publication, Distribution, Etc. Indian Journal of Pure & Applied Physics (IJPAP)
2022-05-10 10:37:11
 
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http://op.niscair.res.in/index.php/IJPAP/article/view/60518
 
Data Source Entry Indian Journal of Pure & Applied Physics (IJPAP); ##issue.vol## 60, ##issue.no## 5 (2022): Indian Journal of Pure & Applied Physics
 
Language Note en
 
Nonspecific Relationship Entry http://op.niscair.res.in/index.php/IJPAP/article/download/60518/465598020
http://op.niscair.res.in/index.php/IJPAP/article/download/60518/465598021
 
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