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Femto Seconds Laser Based Efficient THz Generation from Different Temperature Annealed CdTe Thin Films and Effects of Carrier Concentration and Phase Transition on Efficiency of Generation

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Title Femto Seconds Laser Based Efficient THz Generation from Different Temperature Annealed CdTe Thin Films and Effects of Carrier Concentration and Phase Transition on Efficiency of Generation
 
Creator Mahendar, M
Krishna, R N Vamsi
Chaudhary, A K
 
Subject Cadmium Telluride
Thin films
Tera-Hertz Generation
Carrier concentration
X ray Analysis
Phase transition
 
Description 401-406
The paper reports the thermal evaporation based growth process of CdTe thin films on glass substrates. These films were
annealed between room temperature to 200, 300 and 400 oC, respectively. The XRD characterization of these films revealed the
change in crystalline phase from cubic to triclinic above 200 oC. Finally, these films were subjected to 800 nm wavelength of
35fs pulsed obtained from Ti: sapphire amplifier at 1kHz repetition rate. The incident power of the laser was focused and tuned
between 150-350 mW range and generated THz signals were recorded using calibrated Pyroelectric detector at 22.5 Hz
frequency. The highest power of the THz signal was 80nW for 200 oC annealed film with respect to incident power of 300mW.
The highest efficiency of THz signal was of the order of 3.11E-5%. We have also explained the effect of carrier concentration
and phase transition with respect to different annealed temperature for efficient generation of THz signal.
 
Date 2022-05-13T09:17:40Z
2022-05-13T09:17:40Z
2022-05
 
Type Article
 
Identifier 0975-0959 (Online); 0301-1208 (Print)
http://nopr.niscair.res.in/handle/123456789/59711
 
Language en
 
Publisher CSIR-NIScPR, India
 
Source IJPAP Vol.60(05) [May 2022]