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A Simple Analytical Model of a GaN MODFET to Study its DC and RF Performance

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Title A Simple Analytical Model of a GaN MODFET to Study its DC and RF Performance
 
Creator Shit, Prabir Kumar
Pal, Radha Raman
Dutta, Sutanu
 
Subject GaN MODFET
Theoritical Modeling
DC Characteristics
RF Characteristics
Threshold Voltage
 
Description 395-400
This work presents a theoretical study of a GaN MODFET considering accurate velocity field relation of GaN for a wide
range of electric field. The analytical expression of different DC parameters such as drain current, mutual conductance and
drain conductance of the device has been derived and their variation over different field regions has been investigated. This
work has also been extended to study the RF parameters like cut-off frequency and maximum operating frequency of the
device. The threshold voltage of the device is also derived and studied in terms of the thickness of the doped AlGaN layer
and mole fraction of AlGaN. The mathematical model presented here is calibrated with the experimentally available results
reported earlier and a good agreement has been observed.
 
Date 2022-05-13T09:20:28Z
2022-05-13T09:20:28Z
2022-05
 
Type Article
 
Identifier 0975-0959 (Online); 0301-1208 (Print)
http://nopr.niscair.res.in/handle/123456789/59712
 
Language en
 
Publisher CSIR-NIScPR, India
 
Source IJPAP Vol.60(05) [May 2022]