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The Effectiveness of Ga Percent on the Electrical Characteristics of Al/CuIn1-xGaxSe2/ITO Schottky Junctions

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Title The Effectiveness of Ga Percent on the Electrical Characteristics of Al/CuIn1-xGaxSe2/ITO Schottky Junctions
 
Creator Hamrouni, S
AlKhalifah, Manea S
Saad, K Ben
El-Bana, M S
 
Subject CIGS
Schottky junctions
Electrodeposition
Energetic factor
SCLC method
 
Description 582-589
The electrodeposition method has been employed to deposit our quaternary semiconductor thin films CuIn1-xGaxSe2 (CIGS)
which is deposited on Indium Tin Oxide (ITO) substrates with different Gallium ratios (x=0, 0.2, 0.4, 0.6, 0.8 and 1). The structural
and optical characteristics variation of the films with altering Ga percent has been studied. The impact of changing the Ga/(In+Ga)
atomic ratio on the electrical transport characteristics of electrodeposited CIGS thin films has been investigated using I-V and C-V
measurements. All junctions have revealed the Schottky behavior. The energy gap of the studied compositions has increased with
increasing Ga content. This lowered the values of charge mobility in the investigated films. Besides, the optimum Ga/(In+Ga)
atomic proportion in the view of the obtained results is achieved by adding Ga with 20 %. Also, this finding approves the validation
of our proposed criterion in expecting the most efficient photovoltaic junctions. The obtained results could improve our current
knowledge of the quaternary photovoltaic solar cells.
 
Date 2022-06-30T09:20:56Z
2022-06-30T09:20:56Z
2022-07
 
Type Article
 
Identifier 0975-0959 (Online); 0301-1208 (Print)
http://nopr.niscpr.res.in/handle/123456789/59986
 
Language en
 
Publisher NIScPR-CSIR, India
 
Source IJPAP Vol.60(07) [July 2022]