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<strong>The Effectiveness of Ga Percent on the Electrical Characteristics of Al/CuIn<sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub>/ITO Schottky Junctions</strong>

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Title Statement <strong>The Effectiveness of Ga Percent on the Electrical Characteristics of Al/CuIn<sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub>/ITO Schottky Junctions</strong>
 
Added Entry - Uncontrolled Name Hamrouni, Sahbi ; Laboratoire de nanomatériaux et des systèmes pour les énergies renouvelables(LaNSER), Centre de Recherches et des Technologies de l'Energie (CRTEn), BP. 95, Hammam Lif 2050, Tunisia
AlKhalifah, Manea ; Materials Physics and Energy Laboratory, Physics Department, College of Science and Arts at Ar Rass, Qassim University, ArRass 51921, Kingdom of Saudi Arabia
Ben Saad, Khaled ; Laboratoire de nanomatériaux et des systèmes pour les énergies renouvelables(LaNSER), Centre de Recherches et des Technologies de l'Energie (CRTEn), BP. 95, Hammam Lif 2050, Tunisia
El-Bana, Mohammed Sobhy Elsayed; a Nanoscience & Semiconductor Laboratories, Department of Physics, Faculty of Education, Ain Shams University, Cairo, Egypt b Materials Physics and Energy Laboratory, Physics Department, College of Science and Arts at Ar Rass, Qassim University, ArRass 51921, Kingdom of Saudi Arabia
This work has been financed by the authors
 
Uncontrolled Index Term Thin films; Photovoltaic applications; Electrical Properties; Electrical properties
CIGS; Schottky junctions; Electrodeposition; Energetic factor; SCLC method
 
Summary, etc. The electrodeposition method has been employed to deposit our quaternary semiconductor thin films CuIn1-xGaxSe2 (CIGS) which is deposited on Indium Tin Oxide (ITO) substrates with different Gallium ratios (x=0, 0.2, 0.4, 0.6, 0.8 and 1). The structural and optical characteristics variation of the films with altering Ga percent has been studied. The impact of changing the Ga/(In+Ga) atomic ratio on the electrical transport characteristics of electrodeposited CIGS thin films has been investigated using I-V and C-V measurements. All junctions have revealed the Schottky behavior. The energy gap of the studied compositions has increased with increasing Ga content. This lowered the values of charge mobility in the investigated films. Besides, the optimum Ga/(In+Ga) atomic proportion in the view of the obtained results is achieved by adding Ga with 20 %. Also, this finding approves the validation of our proposed criterion in expecting the most efficient photovoltaic junctions. The obtained results could improve our current knowledge of the quaternary photovoltaic solar cells.
 
Publication, Distribution, Etc. Indian Journal of Pure & Applied Physics (IJPAP)
2022-08-02 12:32:00
 
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http://op.niscair.res.in/index.php/IJPAP/article/view/61748
 
Data Source Entry Indian Journal of Pure & Applied Physics (IJPAP); ##issue.vol## 60, ##issue.no## 7 (2022): Indian Journal of Pure & Applied Physics
 
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Nonspecific Relationship Entry http://op.niscair.res.in/index.php/IJPAP/article/download/61748/465602828
http://op.niscair.res.in/index.php/IJPAP/article/download/61748/465602829
 
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