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Designing of 8-Gate Fingered GaN HEMT based Frequency Mixer with Enhanced Gain for Wide Band Communication Systems

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Title Designing of 8-Gate Fingered GaN HEMT based Frequency Mixer with Enhanced Gain for Wide Band Communication Systems
 
Creator Vishnoi, Manoj Kumar
Srikant, Satya Sai
 
Subject Bandwidth
Current-steering
Multi-standard
Reconfigurable
Trans-conductance
 
Description 821-826
The reconfigurable mixer plays an important role in both transmitter as well as receiver section in the present wireless and
digital communication systems. Also such mixer requires lot of power for up-converting and down-converting the signal without
any noise. This paper deals about such type of designing of reconfigurable mixer for wide band communication applications with
Gallium Nitride High Electron Mobility Transistor (GaN HEMT). This GaN HEMT transistor solves the requirement of huge
power over wide range without any noise. The mixer is designed in the present paper for variable gain conversion along with power
consumption trade-off for a wide range of frequency (2–8 GHz) with reconfigurable concept. Applied Wave Research (AWR)
simulator was used to design the reconfigurable mixer. The gain is controlled by changing the trans-conductance of the input RF
stage, and the current steering in trans-impedance stage. A broadband down-converter mixer is designed that provide different
conversion gain, ranging from 25–33.5 dB with two different modes. The large bandwidth of the mixer is achieved by shunting the
trans-conductance stage and with various switching stages. The results also show that there is good isolation along with conversion
gain of designed reconfigurable mixer, for wide range in various communication applications.
 
Date 2022-08-03T05:04:04Z
2022-08-03T05:04:04Z
2022-08
 
Type Article
 
Identifier 0022-4456 (Print); 0975-1084 (Online)
http://nopr.niscpr.res.in/handle/123456789/60253
https://doi.org/10.56042/jsir.v81i08.55620
 
Language en
 
Publisher NIScPR-CSIR,India
 
Source JSIR Vol.81(08) [AUG 2022]