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Structural, Dielectric and Electrical Properties of Homovalent Doped SrSn1-xTixO3 (0 ≤ x ≤ 0.08) System

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Title Structural, Dielectric and Electrical Properties of Homovalent Doped SrSn1-xTixO3 (0 ≤ x ≤ 0.08) System
 
Creator Kumar, Aditya
Singh, Manoj K
Sharma, Minakshi
Kumar, Upendra
 
Subject SrSn1-xTixO3
Sol-gel preparation
Electrical properties
Defects
 
Description 909-913
The samples SrSn1-xTixO3 with composition 0 􀵑 𝑥 􀵑 0.08 have been prepared using sol-gel chemical route by sintering
at 1173 K. All the samples are found to be single phase crystallized in orthorhombic structure. The dielectric properties
indicate the existence of interfacial and orientation polarization in samples found to be stable up to 300 oC. Thermal
dependence of electrical conductivity represents two conduction regions with activation energy (0.77-0.94) eV in region-1
and (0.19-0.27) eV in region-2 respectively. The plot of dc conductivity with hopping frequency results unit slope
representing that the charge carriers remain same in both processes. DC conductivity of samples are found to be increased
with Ti4+, due to reduction in polaron size. The present materials can be potentially used in thermally stable capacitor and
mixed ionic and electronic conductors (MIECs) applications.
 
Date 2022-11-09T06:17:34Z
2022-11-09T06:17:34Z
2022-11
 
Type Article
 
Identifier 0975-0959 (Online); 0301-1208 (Print)
http://nopr.niscpr.res.in/handle/123456789/60817
https://doi.org/10.56042/ijpap.v60i11.65819
 
Language en
 
Publisher NIScPR-CSIR, India
 
Source IJPAP Vol.60(11) [Nov 2022]