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| Field | Value |
| Title | Dual layer Pt metal nanocrystal flash for multi-level-cell NAND application |
| Names |
SINGH, PK
BISHT, G MAHAPATRA, S HOFMANN, R SINGH, K |
| Date Issued | 2009 (iso8601) |
| Abstract | Most of the current high-density Flash cells use multi-level-cell (MLC) technology to store 2-bits/cell to increase memory density. In this work, dual layer metal nanocrystal (NC) flash EEPROM device, with large memory window, good retention and 10(4) cycle endurance is reported. High-temperature retention, gate bias accelerated retention, read disturb and post-cycling retention measurements show excellent reliability of the NC devices which make them suitable for the MLC application. |
| Genre | Proceedings Paper |
| Topic | Memory |
| Identifier | 2009 IEEE INTERNATIONAL MEMORY WORKSHOP,78-81 |