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| Field | Value |
| Title | Growth mechanism for vertical growth of nanopillars in progressive annealed HWCVD Grown silicon nanostructures |
| Names |
PATIL, TC
CHALCRABARTI, S |
| Date Issued | 2009 (iso8601) |
| Abstract | Here we propose a growth mechanism for the vertically growing conical nanopillars in progressive annealed samples grown using Hot Wire CVD process. Paramagnetic defects are present in a-Si:H films grown at low temperatures (Ts<300 degrees C). During progressive annealing, at around 500 degrees C, dehydrogenation of a- Si takes place; but at higher temperatures rehydrogenation alongwith crystallization of a-Si facilitates the vertical growth of nanopillars. |
| Genre | Proceedings Paper |
| Topic | Nanocrystals |
| Identifier | 2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009),132-135 |