Record Details

DSpace at IIT Bombay

View Archive Info
 

Metadata

 
Field Value
 
Title Frequency selective IR-filter produced by using EB-lithography
 
Names KATHURIA, YP
Date Issued 2007 (iso8601)
Abstract This paper reports on the fabrication of Jerusalem cross diplexer by direct write electron beam (EB) lithography followed by reactive ion etching (RIE) on a phosphorus doped polished silicon wafer substrate. Such structures can be used as frequency selective components in visible, microwave and near infra-red wavelength region. Replication of the patterns is accomplished by micron or sub-micron order mould fabricated from the silicon (Si) master. Fourier transform infra-red reflectance (FT-IR) measurements were performed to characterize the structured patterns. The spectral reflectance from these patterns clearly show a reflection dip due to surface plasmon excitation in the near infra-red wavelength at about 1.42 and 2.5 mu m, respectively. Potential applications such as antireflection surface (ARS) can be realized. (c) 2007 Elsevier B.V. All rights reserved.
Genre Article; Proceedings Paper
Topic Transmission
Identifier APPLIED SURFACE SCIENCE,253(19)7826-7830