| |
| Field |
Value |
| |
| Title |
Frequency selective IR-filter produced by using EB-lithography |
| |
| Names |
KATHURIA, YP
|
| Date Issued |
2007 (iso8601) |
| Abstract |
This paper reports on the fabrication of Jerusalem cross diplexer by direct write electron beam (EB) lithography followed by reactive ion etching (RIE) on a phosphorus doped polished silicon wafer substrate. Such structures can be used as frequency selective components in visible, microwave and near infra-red wavelength region. Replication of the patterns is accomplished by micron or sub-micron order mould fabricated from the silicon (Si) master. Fourier transform infra-red reflectance (FT-IR) measurements were performed to characterize the structured patterns. The spectral reflectance from these patterns clearly show a reflection dip due to surface plasmon excitation in the near infra-red wavelength at about 1.42 and 2.5 mu m, respectively. Potential applications such as antireflection surface (ARS) can be realized. (c) 2007 Elsevier B.V. All rights reserved. |
| Genre |
Article; Proceedings Paper |
| Topic |
Transmission |
| Identifier |
APPLIED SURFACE SCIENCE,253(19)7826-7830 |
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