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Title Study of degradation in channel initiated secondary electron injection regime
 
Names MOHAPATRA, NR
MAHAPATRA, S
RAMGOPAL RAO, V
Date Issued 2001 (iso8601)
Abstract This paper analyzes the Channel Initiated
Secondary Electron injection mechanism
and the resulting hot-carrier degradation
in deep sub-micron n-channel MOSFETs.
The correlation between gate (IG) and
substrate current (IB) has been studied for
different values of substrate bias. Stress
and charge pumping measurements have
been carried out to study the degradation
under identical substrate bias and gate
current conditions. Results show that under
identical gate current (programming time
for flash memory cells), the degradation is
less for higher negative substrate bias.
Genre Article
Topic Flash Memory
Identifier Proceeding of the 31st European Solid-State Device Research Conference, Nuremberg, Germany, 11-13 September 2001, 291-294