ICAR Research Data Repository for Knowledge Management
DSpace at IIT Bombay
View Archive InfoMetadata
| Field | Value |
| Title | Comparison of sub-bandgap impact ionization in sub-100 nm conventional and lateral asymmetrical channel nMOSFETs |
| Names |
ANIL, K
MAHAPATRA, S RAO, VR EISELE, I |
| Date Issued | 2001 (iso8601) |
| Abstract | Sub-bandgap impact ionization is compared in 100 nm channel length conventional channel and laterally asymmetrical n-channel metal oxide semiconductor field effect transistor (MOSFET). An abnormal increase of the gate voltage at which the substrate current peaks is reported. The effect is enhanced in the case of laterally asymmetric channel devices. Experimental and simulation results are presented that suggest the role of inversion layer quantization as an energy gain mechanism. |
| Genre | Article; Proceedings Paper |
| Topic | Silicon Mosfets |
| Identifier | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,40(4B)2621-2626 |