ICAR Research Data Repository for Knowledge Management
DSpace at IIT Bombay
View Archive InfoMetadata
| Field | Value |
| Title | Extensive reliability analysis of Tungsten dot NC devices embedded in HfAlO high-k dielectric under NAND (FN/FN) operation |
| Names |
SINGH, PK
NAINANI, A |
| Date Issued | 2007 (iso8601) |
| Abstract | In this work we present an extensive reliability and performance evaluation of Tungsten dot Nanocrystal (NC) devices under NAND mode of operation. Improvement in performance and reliability was observed with scaling W and L. The use of better high-k processing is proposed to improve the reliability. We also propose a numerical simulation model for NC memory devices using transient capacitive charging model. The approach is very generic and computationally less extensive than the previous works. |
| Genre | Proceedings Paper |
| Topic | Metal Nanocrystal Memories |
| Identifier | IPFA 2007: PROCEEDINGS OF THE 14TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS,197-201 |