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| Field | Value |
| Title | Plasma process induced abnormal 1/f noise behavior in deep sub-micron MOSFETs |
| Names |
RAMGOPAL RAO, V
WIJERATNE, G CHU, D BROZEK, T VISWANATHAN, CR |
| Date Issued | 1998 (iso8601) |
| Abstract | The effect of plasma damage on the MOSFET's flicker noise properties is examined in this work. We observe an abnormal noise peak in the 1/f noise spectrum at around 2 kHz which is a characteristic of the plasma damage. The dependence of the noise peak on the plasma induced degradation was studied in virgin n- and p-channel MOSFETs and this peak is shown to correlate well with the amount of damage in the p-MOSFETs. |
| Genre | Article |
| Topic | Mosfet |
| Identifier | Proceedings of the 3rd International Symposium on Plasma Process-Induced Damage, Honolulu, USA, 4-5 June 1998, 124-127 |