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Field | Value |
Title | A comprehensive trapped charge profiling technique for SONOS flash EEPROMs |
Names |
NAIR, PR
BHARATH KUMAR, P SHARMA, RAVINDER MAHAPATRA, S KAMOHARA, S |
Date Issued | 2004 (iso8601) |
Abstract | Trapped charge profiles under CHE program of SONOS flash cells are uniquely determined and verified using I-V, GIDL and CP measurements and Monte Carlo simulations. The prospect of profiling using I-V measurement alone is discussed. The inaccuracy associated with conventional CP technique is discussed. The correct method of CP simulation for programmed SONOS devices is shown and programming induced interface-trap generation is estimated. |
Genre | Article |
Topic | Monte Carlo Methods |
Identifier | Proceedings of the IEEE International Electron Devices Meeting Technical Digest, Tokyo, Japan, 13-15 December 2004, 403-406 |