ICAR Research Data Repository for Knowledge Management
DSpace at IIT Bombay
View Archive InfoMetadata
| Field | Value |
| Title | Drain current model for undoped symmetric double-gate FETs using a velocity saturation model with exponent n=2 |
| Names |
HARIHARAN, V
VASI, J RAO, VR |
| Date Issued | 2007 (iso8601) |
| Genre | Proceedings Paper |
| Topic | Dg Mosfet |
| Identifier | 2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2,138-139 |