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Title High-energy ion implantation of iron in silicon
 
Names BHOLE, KG
KAMALAPURKAR, BA
DUBEY, SK
YADAV, AD
RAO, TKG
MOHANTI, T
KANJILAL, D
Date Issued 2003 (iso8601)
Abstract Seventy MeV, Fe-56(5+) ion implantation into p-type silicon with different doses varying from 1 x 10(12) to 5 x 10(14) ions cm(-2) has been investigated by Fourier transform infrared (FT/IR) reflectivity and low temperature (298-133 K) ESR measurements. The FT/IR reflectivity studies showed the presence of interference fringes in high dose (>1 x 10(13) ions cm(-2)) implanted samples indicating the formation of ion induced damaged layers. The depth of the damaged layer from the silicon surface estimated from fringe shifts was found to be about 16 mum comparable to the project range of 56 Fe ions in silicon at 70 MeV. The ESR studies show the presence of Pa and Pb centers with g values 2.0063 and 2.0015, respectively, at room temperature. In addition to these, other defects observed at g values 2.0071 and 1.9947 are due to complex defects produced by high-energy ion implantation. (C) 2003 Elsevier B.V. All rights reserved.
Genre Article; Proceedings Paper
Topic Irradiated Silicon
Identifier NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,212,525-529