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| Field | Value |
| Title | Capacitance degradation due to fringing field in deep sub-micron MOSFETs with High-K gate dielectrics |
| Names |
INANI, A
RAMGOPAL RAO, V CHENG, B ZEITZOFF, P WOO, JCS |
| Date Issued | 1999 (iso8601) |
| Abstract | High-K gate dielectrics have been under extensive investigation for use in sub -100nm MOSFET's to suppress gate leakage.However,thicker gate dielectrics can result in degradation of the electrical performance due to increased fringing fields from the gate to source/drain. In this paper the capacitance degradation resulting from this effect is analyzed & simple technique to model this effect is presented. |
| Genre | Article |
| Topic | Capacitance |
| Identifier | Proceeding of the 29th European Solid-State Device Research Conference (V 1), Leuven, Belgium, 13-15 September 1999, 160-163 |