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| Field | Value |
| Title | Highly linear and efficient AlGaAs/GaAs HBT power amplifier with integrated linearizer |
| Names |
MRUNAL, AK
SHIRASGAONKAR, M PATRIKA, R |
| Date Issued | 2006 (iso8601) |
| Abstract | This paper gives the description of a novel linearization technique using schottky diode as an active linearizer thereby improving the gain compression and reducing nonlinear phase distortion in AlGaAs/GaAs heterojunction bipolar transistor (HBT). This leads to highly linear and efficient amplification of the QPSK, OFDM. A two stage power amplifier using AlGaAs/GaAs HBT process exhibits an output power (@PldB) of 25dBm and power added efficiency as high as 43%. |
| Genre | Proceedings Paper |
| Identifier | 2006 IEEE Asia Pacific Conference on Circuits and Systems,1442-1445 |