ICAR Research Data Repository for Knowledge Management
DSpace at IIT Bombay
View Archive InfoMetadata
| Field | Value |
| Title | A new physical insight and 3D device modeling of sti type denmos device failure under ESD conditions |
| Names |
SHRIVASTAVA, M
SCHNEIDER, J BAGHINI, MS GOSSNER, H RAO, VR |
| Date Issued | 2009 (iso8601) |
| Abstract | We present experimental and simulation studies of STI type DeNMOS devices under ESD conditions. The impact of base-push-out, power dissipation because of space charge build-up and, regenerative NPN action, on the various phases of filamentation and the final thermal runaway is discussed. A modification of the device layout is proposed to achieve an improvement (similar to 2X) infailure threshold (I(T2)). |
| Genre | Proceedings Paper |
| Identifier | 2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2,669-675 |