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| Field | Value |
| Title | Simulation, fabrication and characterization of high performance planar-doped-barrier sub 100 nm channel MOSFETs |
| Names |
RAMGOPAL RAO, V
HANSCH, W EISELE, I |
| Date Issued | 1997 (iso8601) |
| Abstract | In this paper we present experimental and simulation results on planar-doped-barrier MOSFETs (PDBFETs) and show the advantages that arise from the channel delta doping. Early and higher magnitude of velocity overshoot, suppression of avalanche multiplication, reduced hot-carrier problems are some of the advantages offered by PDBFETs over the conventional homogeneously doped MOSFETs in the sub 100 nm regime. Our low-temperature characterizations show clear ballistic transport in the fabricated 85 nm channel MOSFETs. |
| Genre | Article |
| Topic | Mosfet |
| Identifier | Proceedings of the International Electron Devices Meeting Technical Digest, Washington, USA, 7-10 December 1997, 811-814 |