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Title Material dependence of NBTI physical mechanism in silicon oxynitride (SiON) p-MOSFETs: A comprehensive study by ultra-fast on-the-fly (UF-OTF) I(DLIN) technique
 
Names KUMAR, EN
MAHETA, VD
PURAWAT, S
ISLAM, AE
OLSEN, C
AHMED, K
ALAM, MA
MAHAPATRA, S
Date Issued 2007 (iso8601)
Abstract An Ultra-Fast On-The-Fly (UF-OTF) I(DLIN) technique having 1 mu s resolution is developed and used to study gate insulator process dependence of NBTI in Silicon Oxynitride (SiON) p-MOSFETs. The Nitrogen density at the Si-SiON interface and the thickness of SiON layer are shown to impact temperature, time, and field dependencies of NBTI. The plausible material dependence of NBTI physical mechanism is explored.
Genre Proceedings Paper
Identifier 2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2,809-812