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| Field | Value |
| Title | On the dispersive versus arrhenius temperature activation of nbti time evolution in plasma nitrided gate oxides: measurements, theory, and implications |
| Names |
VARGHESE, D
SAHA, D MAHAPATRA, S AHMED, K NOURI, F ALAM, M |
| Date Issued | 2005 (iso8601) |
| Abstract | Negative bias temperature instability (NBTI) is studied in p-MOSFETs having decoupled plasma nitrided (DPN) gate oxides (EOT range of 12 Aring through 22Aring). Threshold voltage shift (DeltaVT) is shown to be primarily due to interface trap generation (DeltaNIT) and significant hole trapping (DeltaNOT) has not been observed. DeltaVT follows power-law time (t) dependence and Arrhenius temperature (T) activation. |
| Genre | Article |
| Topic | Mosfet |
| Identifier | Proceedings of the IEEE International Electron Devices Meeting Technical Digest, Washington, USA, 5-5 December 2005, 684-687 |