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| Field | Value |
| Title | Characterization of interface and oxide traps in Ge pMOSFETs based on DCIV technique |
| Names |
MAJI, D
CRUPI, F MAGNONE, P GIUSI, G PACE, C SIMOEN, E RAO, VR |
| Date Issued | 2009 (iso8601) |
| Abstract | The interface trap density of fresh TiN/TaN gated HfO(2)/SiO(2)/Si/cpi-Ge pMOSFETs is measured using the DCIV technique. Its temperature dependence is also discussed here. We observe a polarity dependent DCIV peak shift. The bias temperature stress induced interface trapped charge and oxide trapped charge shifts are also systematically investigated in this work. |
| Genre | Proceedings Paper |
| Topic | Transistors |
| Identifier | 2009 2ND INTERNATIONAL WORKSHOP ON ELECTRON DEVICES AND SEMICONDUCTOR TECHNOLOGY,153-156 |