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| Field | Value |
| Title | Mechanism of negative bias temperature instability in CMOS devices: degradation, recovery and impact of nitrogen |
| Names |
MAHAPATRA, S
BHARATH KUMAR, P DALEI, TR SANA, D ALAM, MA |
| Date Issued | 2004 (iso8601) |
| Abstract | NBTI mechanism is discussed for a wide range of stress conditions. Conditions for interface and bulk-trap generation are shown. The bias, time and temperature dependence of interface-trap buildup and recovery are discussed using the framework of the R-D model. The AC frequency dependence and impact of gate oxide nitridation are also discussed. |
| Genre | Article |
| Topic | Cmos Integrated Circuit |
| Identifier | Proceedings of the IEEE International Electron Devices Meeting Technical Digest, San Francisco, USA, 13-15 December 2004, 105-108. |