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| Field | Value |
| Title | Sub-threshold swing degradation due to localized charge storage in SONOS memories |
| Names |
TOMAR, BHAWNA
RAMGOPAL RAO, V |
| Date Issued | 2004 (iso8601) |
| Abstract | This paper discusses the effect of localized charge storage on sub-threshold swing and threshold voltage in silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory cells. By analyzing the change in potential contours, it has been shown that the change in sub-threshold swing is correlated to fringing of electric field lines, and hence to the gate-to-substrate capacitance. |
| Genre | Article |
| Topic | Capacitance |
| Identifier | Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, Taiwan, 8 July 2004, 251-253 |