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Low Power Non-Volatile 7T1M Subthreshold SRAM Cell

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Title Low Power Non-Volatile 7T1M Subthreshold SRAM Cell
 
Creator Mustaqueem, Zeba
Ansar, Abdul Quaiyum
Akram, Md. Waseem
 
Subject Memristance
Subthreshold
SRAM cell
Memristor
Voltage scaling
stability
Power dissipation
 
Description 1016-1024
A new modified 7T1M non-volatile SRAM cell is presented in this paper for low power applications at subthreshold
voltage (very low voltage) simply by connecting the memristor directly with storage node which is acting as storage element
and adding a transistor in between the two storage nodes with feedback connection gives better performance in terms of
average delay, read /write operations and RSNM/WSNM. The memristor based circuits are simulated at subthreshold is a
new insight and a new effort in technology made with improvement of approximately 61% and 23% of RSNM and WSNM
respectively compared to existing memory cell 7T1M and power dissipation is decreased by 66% whereas read delay and
write delay obtained is nominal. Moreover, It has also simulated an adjusting 6T2M and conventional 6T at subthreshold
voltage i.e. VDD=0.3V to compare its stability behaviour at lower supply voltage.
 
Date 2022-12-16T09:31:00Z
2022-12-16T09:31:00Z
2022-12
 
Type Article
 
Identifier 0975-0959 (Online); 0301-1208 (Print)
http://nopr.niscpr.res.in/handle/123456789/61028
https://doi.org/10.56042/ijpap.v60i12.67455
 
Language en
 
Publisher NIScPR-CSIR, India
 
Source IJPAP Vol.60(12) [Dec 2022]