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<strong>Effect of Passivation Layers Permittivity on DC and RF Parameters of GaN MESFETs</strong>

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Authentication Code dc
 
Title Statement <strong>Effect of Passivation Layers Permittivity on DC and RF Parameters of GaN MESFETs</strong>
 
Added Entry - Uncontrolled Name Abdaoui, Nourelimene ; Laboratoire des Semi-Conducteurs, Univesité Badji Mokhtar - Annaba
Hadjoub, Ilhem ; Ecole Nationale de Technologie et d'Ingénierie - ENSTI, Annaba
Doghmane, Abdellaziz ; Laboratoire des Semi-Conducteurs, Université Badji Mokhtar - Annaba
Abid, Lamia ; Laboratoire des Semi-Conducteurs, Université Badji Mokhtar - Annaba
Hadjoub, Zahia ; Laboratoire des Semi-Conducteurs, Université Badji Mokhtar - Annaba
 
Uncontrolled Index Term GaN MESFET, DC and RF parameters, Breakdown voltage, Power density, Access capacitances
 
Summary, etc. Surface passivation impact on DC and RF characteristics of GaN MESFETs was studied using ATLAS simulator from Silvaco. It has been shown that when the relative permittivity, ε<sub>r</sub>, of the inter-electrode passivation layers increases, the breakdown voltage as well as the maximum output power density increases thus improving the applications of the MESFET device in high voltage and high power. However, the high values ​​of relative permittivity lead to an increase in the gate-source C<sub>GS</sub> and gate-drain C<sub>GD</sub> capacitances on which the radio frequency performance of GaN MESFET transistors depends strongly. In effect, this increase leads to a limitation of the performances, RF of the GaN MESFET transistors. Finally, the variations of the parameters studied as a function of ε<sub>r</sub> have been quantified and mathematical expressions are established. These formulas can be very useful for the judicious choice of the passivation layer in GaN MESFETs.
 
Publication, Distribution, Etc. Indian Journal of Pure & Applied Physics (IJPAP)
2023-02-02 14:57:38
 
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http://op.niscair.res.in/index.php/IJPAP/article/view/67097
 
Data Source Entry Indian Journal of Pure & Applied Physics (IJPAP); ##issue.vol## 61, ##issue.no## 2 (2023): Indian Journal of Pure & Applied Physics
 
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Nonspecific Relationship Entry http://op.niscair.res.in/index.php/IJPAP/article/download/67097/465620677
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http://op.niscair.res.in/index.php/IJPAP/article/download/67097/465620679
http://op.niscair.res.in/index.php/IJPAP/article/download/67097/465620691
 
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