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Effect of Passivation Layers Permittivity on DC and RF Parameters of GaN MESFETs

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Title Effect of Passivation Layers Permittivity on DC and RF Parameters of GaN MESFETs
 
Creator Abdaoui, N
Hadjoub, I
Doghmane, A
Abid, L
Hadjoub, Z
 
Subject GaN MESFET
DC
RF parameters
Breakdown voltage
Power density
Access capacitances
 
Description 132-139
Surface passivation impact on DC and RF characteristics of GaN MESFETs was studied using ATLAS simulator from
Silvaco. It has been shown that when the relative permittivity, εr, of the inter-electrode passivation layers increases, the
breakdown voltage as well as the maximum output power density increases thus improving the applications of the MESFET
device in high voltage and high power. However, the high values of relative permittivity lead to an increase in the gatesource
CGS and gate-drain CGD capacitances on which the radio frequency performance of GaN MESFET transistors
depends strongly. In effect, this increase leads to a limitation of the performances, RF of the GaN MESFET transistors.
Finally, the variations of the parameters studied as a function of εr have been quantified and mathematical expressions are
established. These formulas can be very useful for the judicious choice of the passivation layer in GaN MESFETs.
 
Date 2023-02-20T10:57:17Z
2023-02-20T10:57:17Z
2023-02
 
Type Article
 
Identifier 0975-0959 (Online); 0301-1208 (Print)
http://nopr.niscpr.res.in/handle/123456789/61387
https://doi.org/10.56042/ijpap.v61i2.67097
 
Language en
 
Publisher CSIR-NIScPR
 
Source IJPAP Vol.61(02) [Feb 2023]