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RF and Crosstalk Characterization of Chip Interconnects Using Finite Element Method

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Title RF and Crosstalk Characterization of Chip Interconnects Using Finite Element Method
 
Creator Kaur, Manjit
Singh, Gurmohan
Kumar, Yadwinder
 
Subject Crosstalk
EMI
EMC
Finite Element Method
HFSS
IC
 
Description 132-137
This paper presents new finite element method (FEM) based approach for radio frequency (RF) and crosstalk (X talk)
characterization of chip interconnects. Being based on scattering parameters (S-parameters), this approach truly and accurately
demonstrates the transmission line behavior of chip interconnects over a wideband of frequencies. To demonstrate FEM based
method, a single-line and a 3-line interconnect test structures on SiO2-Si substrate have been designed and simulated in High
Frequency Structure Simulator (HFSS). The RF and crosstalk characterization of chip interconnect materials Copper (Cu),
doped multilayer Graphene Nanoribbon (DMLGNR), and neutral multilayer Graphene Nanoribbon (NMLGNR) have been
demonstrated in terms of transmission coefficient Sij &Smn  from 1 to 1000 GHz. The single-line three-dimensional (3D)
structures comprising of Cu, DMLGNR, and NMLGNR have maximum transmission loss values of -15.93 dB, -22.03 dB, and -
13.73 dB at frequencies of 643 GHz, 402 GHz, and 643 GHz, respectively whereas three-line bus structure exhibit maximum
victim-line transmission loss values of -15.28 dB, -17.47 dB, and -15.98 dB at frequencies of 247 GHz, 829 GHz, and 377 GHz,
respectively. Further, the crosstalk results have demonstrated that as frequency increases significant crosstalk is observed
between nearby lines due to electromagnetic interference and coupling (EMI/EMC) issues.
 
Date 2023-03-06T11:09:17Z
2023-03-06T11:09:17Z
2023-03
 
Type Article
 
Identifier 0971-4588 (Print); 0975-1017 (Online)
http://nopr.niscpr.res.in/handle/123456789/61496
https://doi.org/10.56042/ijems.v1i1.60343
 
Language en
 
Publisher NIScPR-CSIR,India
 
Source IJEMS Vol.30(1) [February 2023]