Record Details

Design and Optimization of MEMS based AlN sensor for Acoustic Application

NOPR - NISCAIR Online Periodicals Repository

View Archive Info
 
 
Field Value
 
Title Design and Optimization of MEMS based AlN sensor for Acoustic Application
 
Creator Sawane, Mohini
Prasad, Mahanth
Kumar, Rajesh
 
Subject MEMS sensor
Piezoelectricity
AlN thin film
Design optimization
 
Description 369-375
The market for MEMS sensors based on Aluminum Nitride (AlN) is developing because of AlN material's capacity to
produce CMOS-compatible, highly reliable, and self-powered devices. Utilizing the COMSOL software tool, the sensors
parameters are designed and optimized in accordance with the dimension and thickness of AlN thin film layer. The proposed
design technique is applicable to any piezoelectric diaphragm-based acoustic sensors, regardless of the cavity and hole
structures in the silicon or SOI (silicon on insulator) based substrate. The diaphragm consists fixed 25 μm Si layer and
variable (0.5 μm to 2.5 μm) Al/AlN/Al layer. The AlN layer is sandwiched between top and bottom Aluminum electrodes of
thickness 0.3 μm. The diaphragm area is varying from 1.75 mm x 1.75 mm to 3.5 mm x 3.5 mm. Prior to engaging in
expensive fabrication methods, this work optimizes the AlN layer with regard to resonance frequency, deflection at the
diaphragm's center, and sensor response. The simulated results demonstrate the trade-off between the diaphragm deflection
at the center and a workable frequency range in accordance with the design parameters that were specified. For a frequency
range of 0.5 kHz to 18 kHz, the device's optimal design has a simulated sensitivity of 2.5 μV/Pa and at resonance the
sensitivity is 200 μV/Pa.
 
Date 2023-08-16T12:17:27Z
2023-08-16T12:17:27Z
2023-08
 
Type Article
 
Identifier 0971-4588 (Print); 0975-1017 (Online)
http://nopr.niscpr.res.in/handle/123456789/62448
https://doi.org/10.56042/ijems.v30i3.3658
 
Language en
 
Publisher NIScPR-CSIR, India
 
Source IJEMS Vol.30(3) [June 2023]