Record Details

Fabrication of Bismuth Telluride Thin Films using Thermal Evaporation Technique and its Electrical Properties

NOPR - NISCAIR Online Periodicals Repository

View Archive Info
 
 
Field Value
 
Title Fabrication of Bismuth Telluride Thin Films using Thermal Evaporation Technique and its Electrical Properties
 
Creator Pooja, Paul Singh
Kumar, Sunil
Bulla, Mamta
Jatrana, Anushree
Kumar, Vinay
 
Subject Thin film
Bismuth telluride
Photoluminescence
Optical properties
Electrical properties
 
Description 781-784
Thin films have received great attention in recent years because of their extensive applications in various fields of
science and technology. The studies of the electrical properties of semiconducting thin films have been primarily provoked
by attractive micro-electronic device applications. Bismuth Telluride (Bi2Te3) is the most widely used material among the
various V- VI compounds. In this study, thin films of Bi2Te3 were fabricated onto different substrates (i.e., glass and silica)
by using thermal evaporation technique. Their structural, morphological, optical, and electrical properties were investigated
using X-ray diffraction (XRD), Field Emission-Scanning Electron Microscopy (FE-SEM), Photoluminescence (PL)
spectroscopy, and Source meter instrument, respectively. XRD analysis showed that the films were crystalline in nature. FESEM
images showed that the films have a homogenous and compact grain surface. The optical band gap was about 2 eV for
both types of film. The I-V characteristics of thin films were analysed at temperatures ranging from 30 °C to 100 °C. It was
found that the film fabricated onto silica substrates showed large electrical conductivity as compared to the others. Also, the
increment in electrical conductivity was observed with the temperature indicating that the prepared films have a negative
temperature coefficient of resistance.
 
Date 2023-09-21T05:42:23Z
2023-09-21T05:42:23Z
2023-09
 
Type Article
 
Identifier 0975-0959 (Online); 0301-1208 (Print)
http://nopr.niscpr.res.in/handle/123456789/62565
https://doi.org/10.56042/ijpap.v61i9.4405
 
Language en
 
Publisher NIScPR-CSIR, India
 
Source IJPAP Vol.61(09) [September 2023]