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Synthetization and Characterization of Mg-doped SnSe with Mg Substitution at the Sn Site by High Energy Ball Milling Technique

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Title Synthetization and Characterization of Mg-doped SnSe with Mg Substitution at the Sn Site by High Energy Ball Milling Technique
 
Creator Bairwa, Mukesh Kumar
Gowrishankar, R
Saini, Anjali
Neeleshwar, S
 
Subject Phase purification
Ball milling
SnSe
Doping
 
Description 762-764
Tin selenide (SnSe) is a semiconductor with an orthorhombic crystal structure having an indirect and direct band gap of
0.9 eV and 1.3 eV respectively. The SnSe and Mg-doped SnSe was synthesized by high energy ball milling technique at 300
RPM for 22 hrs. The formation of pure orthorhombic phases of SnSe and Mg-doped SnSe were confirmed by X-ray
diffraction (XRD). From the XRD pattern, the crystalline size was estimated which lies below ~10 nm. The morphology of
particle size distribution was carried out by scanning electron microscopy (SEM).
 
Date 2023-09-21T05:54:19Z
2023-09-21T05:54:19Z
2023-09
 
Type Article
 
Identifier 0975-0959 (Online); 0301-1208 (Print)
http://nopr.niscpr.res.in/handle/123456789/62571
https://doi.org/10.56042/ijpap.v61i9.3494
 
Language en
 
Publisher NIScPR-CSIR, India
 
Source IJPAP Vol.61(09) [September 2023]