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Synthetization and Characterization of Mo-doped Mn4Si7 by High Energy Ball Mill

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Title Synthetization and Characterization of Mo-doped Mn4Si7 by High Energy Ball Mill
 
Creator Saini, Anjali
Gowrishankar, R
Bairwa, Mukesh Kumar
Neeleshwar, S
 
Subject Phase purification
Ball milling
Manganese silicide
Earth-abundant
Doping
 
Description 759-761
Mn4Si7 is a non-degenerating semiconductor with an indirect band gap of 0.77eV having multi-domain applications.
The Mn4Si7 and Mo-doped Mn4Si7 were synthesized by high-energy ball milling at 600 RPM for 50H. From the X-ray
diffraction (XRD), the tetragonal phase was observed. The average crystalline size was estimated by the Debye-Scherrer
equation which lies below ~25 nm. The morphology studies reveal different shapes and sizes were observed by scanning
electron microscopy (SEM).
 
Date 2023-09-21T05:57:01Z
2023-09-21T05:57:01Z
2023-09
 
Type Article
 
Identifier 0975-0959 (Online); 0301-1208 (Print)
http://nopr.niscpr.res.in/handle/123456789/62572
https://doi.org/10.56042/ijpap.v61i9.3491
 
Language en
 
Publisher NIScPR-CSIR, India
 
Source IJPAP Vol.61(09) [September 2023]