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Study of Electrical Properties of Lead-free BCZT Ceramic (Ba0.80Ca0.20Zr0.1Ti0.9)O3 at Different Sintering Temperatures

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Title Study of Electrical Properties of Lead-free BCZT Ceramic (Ba0.80Ca0.20Zr0.1Ti0.9)O3 at Different Sintering Temperatures
 
Creator Kumar, Sanjeev
Rawat, Saraswati
Singh, K Chandramani
 
Subject Lead free
Dielectric properties
Sintering temperature
 
Description 744-747
There is a tremendous growth in the demand for high performance lead-free ceramics due to environmental issues. In the
present work, the traditional solid-state sintering technique at different sintering temperatures, namely, 1380, 1400 and 1420 oC
has been employed to prepare lead-free (Ba0.80Ca0.20Zr0.1Ti0.9)O3 ceramics. Detailed XRD analysis suggests pure perovskite
structure for the ceramic synthesized at higher sintering temperature 1420 oC without any impurities. Density measurement
using Archimedes principle shows a trend of increased densification with increasing sintering temperature. Room temperature
frequency dependent dielectric constant study indicates high value of dielectric constant (εrt= 2665-2490) in the frequency
range100 Hz-100 kHz for the ceramic sintered at 1420 oC. Temperature dependent dielectric studies at constant frequency
(10 kHz) indicates that ceramic prepared at 1420 oC has high Curie temperature Tc =77 oC. Ferroelectric properties of the
ceramics are enhanced by raising the sintering temperature from 1380 to 1420 oC with higher spontaneous polarisation of
Ps = 7.68 μC/cm2 corresponding to 1420 oC ceramic. The reasonably high values of Curie temperature, room temperature
dielectric constant in the large frequency range and improved ferroelectric properties of the ceramic prepared at 1420 oC
indicate that this ceramic can be a good candidate for being developed into commercially viable lead-free ferroelectric material.
 
Date 2023-09-21T06:04:01Z
2023-09-21T06:04:01Z
2023-09
 
Type Article
 
Identifier 0975-0959 (Online); 0301-1208 (Print)
http://nopr.niscpr.res.in/handle/123456789/62576
https://doi.org/10.56042/ijpap.v61i9.3388
 
Language en
 
Publisher NIScPR-CSIR, India
 
Source IJPAP Vol.61(09) [September 2023]