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A Two-step Method to Grow ZnSe Thin Films and to Study their Characteristics

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Title A Two-step Method to Grow ZnSe Thin Films and to Study their Characteristics
 
Creator Hussain, Zakir
Padha, Naresh
Ahmad, Shafiq
Dolma, Padma
 
Subject ZnSe
Thin films
Solar Cells
Transmittance
 
Description 739-743
The ZnSe material synthesised by the fusion method was used to deposit 200 nm thin layers on corning glass substrate at
300 K in a vacuum (2x10-6 mbar). The as-deposited films were annealed at 573 K in a vacuum (1x10-3 mbar). The obtained
crystallites provide the most significant peak (MSP) along (111) orientations corresponding to a zinc blende structure.
Further, the grown samples show maximum transmittance of ~ 90% in visible - NIR regions of the E M Spectrum. The
layers possess the direct bandgap (Eg) of 2.02 (300 K) and 2.57 eV (573 K). The surface morphology indicates the uniform
spread of nanocrystalline particles over the substrate. Thus, the obtained ZnSe films are useful as buffer/window layers in
solar cell structures.
 
Date 2023-09-21T06:05:48Z
2023-09-21T06:05:48Z
2023-09
 
Type Article
 
Identifier 0975-0959 (Online); 0301-1208 (Print)
http://nopr.niscpr.res.in/handle/123456789/62577
https://doi.org/10.56042/ijpap.v61i9.3209
 
Language en
 
Publisher NIScPR-CSIR, India
 
Source IJPAP Vol.61(09) [September 2023]