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CO Gas Sensing Properties of Chemically Deposited ZnO: Al Thin Films

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Title CO Gas Sensing Properties of Chemically Deposited ZnO: Al Thin Films
 
Creator Singh, Th Ratanjit
Singh, L Raghumani
Singh, A Nabachandra
 
Subject Chemical Bath Deposition
EDAX
Optical band gap
SEM
UV-Visible spectroscopy
XRD
Zinc Oxide
 
Description 23-28
In this research work, the structural and optical properties of undoped and Al doped ZnO thin films are being reported.
The nanocrystalline ZnO thin films were deposited on glass substrate by chemical bath deposition technique using zinc
acetate (AR), triethanolamine (AR), sodium hydroxide (AR) as the source materials and aluminum nitrate as source of the
dopant. The structural characterization was done by XRD (X-ray diffraction). The crystallite size was found to decrease on
doping of Al. SEM (Scanning Electron Microscope) was employed to examine the surface morphology of thin films and
formation of ZnO nanorod was observed. The optical band gap of thin films was studied by UV-Visible spectroscopy.
The band gap energy was found to vary from 3.84 eV to 4.0 eV. The electrical and CO gas sensing properties of thin
films were also investigated. For application purpose, the quick response of chemically synthesized ZnO thin films to
CO gas was observed and the fast recovery in absence of CO gas was also observed.
 
Date 2023-12-27T05:56:28Z
2023-12-27T05:56:28Z
2023-12
 
Type Article
 
Identifier 0975-0959 (Online); 0301-1208 (Print)
http://nopr.niscpr.res.in/handle/123456789/63099
https://doi.org/10.56042/ijpap.v62i1.5445
 
Language en
 
Publisher NIScPR-CSIR,India
 
Source IJPAP Vol.62(01) (January 2024]