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A Systematic Investigation of Dual Material Gate TFET for Improved Performance

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Title A Systematic Investigation of Dual Material Gate TFET for Improved Performance
 
Creator Prasad, Miriyala Durga
Saini, Gaurav
 
Subject DG TFET
DMG HD TFET
Dual Metal Gate
HD TFET
Tunnel FET
 
Description 229-237
This study explores the influence of different metal gate combinations on the performance of dual-metal gate TFETs
(DMG-TFET). The ON-state current in a TFET depends on band-to-band tunneling (BTBT) across the junction between the
source and channel regions. Therefore, it is crucial to select a tunnel gate material with an appropriate work function to
optimize the devices’ overall performance. The present work explores the effect of dual metal gates having different work
functions on tunnel barrier width of TFET. In this work, three distinct Double Gate TFET structures; Double Gate (DG)
TFET, Dual Metal Gate (DMG) TFET, and Dual Metal Gate Hetero-Dielectric (DMG-HD) TFET are designed using TCAD
device simulator. The proposed device (DMG-HD) TFET is benchmarked by considering various performance metrics such
as ON-state current ION, OFF-state current IOFF, ON-to-OFF current ratio ION /IOFF, and sub-threshold slope (SS). This study
also highlights the key finding of optimizing the length of dual metals and the work functions of metal gates (M-1) and
(M-2) in TFETs. The results show that the proposed device (DMG-HD TFET) gives improved performance compared to the
other two devices. The proposed TFET structure improves the ON-current by two orders (10−5 to 10−3 (A/μm)),
ION /IOFF ratio by three orders (109 to 1012 (A/μm)) and sub-threshold swing (SS) by 23.82% compared to the
conventional TFET device.
 
Date 2024-02-23T04:35:45Z
2024-02-23T04:35:45Z
2024-02
 
Type Article
 
Identifier 0975-0959 (Online); 0301-1208 (Print)
http://nopr.niscpr.res.in/handle/123456789/63393
https://doi.org/10.56042/ijpap.v62i3.5888
 
Language en
 
Publisher NIScPR-CSIR,India
 
Source IJPAP Vol.62(03) [March 2024]