Comparative Study of Lead-free Perovskite Materials MASnI3, MASnBr3 and MAGeI3 to Design, Simulate and Optimize Lead Free PSC
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Title |
Comparative Study of Lead-free Perovskite Materials MASnI3, MASnBr3 and MAGeI3 to Design, Simulate and Optimize Lead Free PSC
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Creator |
Bala, Nishi
Mallik, Sanjeev Kumar |
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Subject |
ETL-Electron transport layer
PSC–Perovskite solar cell PAL – Perovskite absorption layer PCE – Power conversion efficiency |
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Description |
292-303
The advancement of photovoltaic technology has certainly been revamped by lead-based perovskite solar cells (PSCs). But lead toxicity is a big hurdle in its large-scale commercial production and usage. Hence, in current work three lead-free Perovskite materials MASnI3, MASnBr3 and MAGeI3 has been thoroughly investigated to develop environment friendly PSCs of high efficiency and stability. The modelled device structures utilized ZnO as electron transport layer (ETL), CH3NH3SnI3, CH3NH3SnBr3 and CH3NH3GeI3 as perovskite absorption layer (PAL), Spiro-OMeTAD as hole transport layer (HTL), Indium doped tin oxide (ITO) as top electrode and Au as anode contact. Defect density in combination with different thickness of perovskite absorption layer has been investigated to obtain optimum solar cell parameters. At a thickness of 500 nm and defect density of 1×1014cm−3 of PAL, simulated Perovskite solar cell ITO/ZnO/CH3NH3SnI3/Spiro-OMeTAD/Au provided optimized solar cell parameters as PCE 25.95%, Voc 1.06V, Jsc 31.67mA/cm2 and FF 77.24%, ITO/ ZnO/CH3NH3SnBr3/Spiro-OMeTAD/Au provided PCE 25.01%, VOC 1.02V, JSC 32.41mA/cm2 and FF 75.68%,ITO/ZnO/CH3NH3SnI3/Spiro-OMeTAD/Au provided PCE 19.66%, VOC 1.81V, JSC 14.29mA/cm2 and FF 75.95%. Further,effect of interface defect density, series resistance, shunt resistance, and temperature are studied on the solar cell characteristics. It is well observed that Sn-based devices are more efficient and less stable than Ge-based devices and vice versa. |
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Date |
2024-03-21T05:11:07Z
2024-03-21T05:11:07Z 2024-03 |
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Type |
Article
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Identifier |
0975-0959 (Online); 0301-1208 (Print)
http://nopr.niscpr.res.in/handle/123456789/63612 https://doi.org/10.56042/ijpap.v62i4.7435 |
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Language |
en
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Publisher |
NIScPR-CSIR,India
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Source |
IJPAP Vol.62(04) [April 2024]
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