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On the Electrical and Thermal Study of a MgZnO/ZnO HEMT for High Field Applications

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Title On the Electrical and Thermal Study of a MgZnO/ZnO HEMT for High Field Applications
 
Creator Chakraborty, Saheb
Pal, Radha Raman
Dutta, Sutanu
 
Subject ZnO MODFET
ZnO HEMT
Velocity saturation model
DC characteristics
RF characteristics
MgZnO/ZnO heterostructure
 
Description 285-291
In this work, a simple current equation of a HEMT based on MgZnO and ZnO heterojunction is proposed in the
framework of electron velocity saturation. The mathematical formulation of drain current is presented as a function of mole
fraction and device temperature. It is observed that the effect of the mole fraction of MgZnO has a significant role to
modulate the drain current of the device. For example, the drain current is shifted by almost 9% for a change in mole
fraction from 0.2 (236.5mA) to 0.5 (257.2mA) when no gate voltage is applied. In addition to this, the impact of
environmental thermal variation is included in our study and a noticeable shift of drain current and other device parameter
has been observed for a temperature range 300K to 500K. This work has also been extended to study the switching
characteristics of the device in terms of mole fraction of MgZnO and ambient temperature. It is observed that the threshold
voltage is shifted by 0.36 V for a change in mole fraction by 0.2.
 
Date 2024-03-21T05:12:54Z
2024-03-21T05:12:54Z
2024-03
 
Type Article
 
Identifier 0975-0959 (Online); 0301-1208 (Print)
http://nopr.niscpr.res.in/handle/123456789/63613
https://doi.org/10.56042/ijpap.v62i4.7614
 
Language en
 
Publisher NIScPR-CSIR,India
 
Source IJPAP Vol.62(04) [April 2024]