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On-Orbit Response Analysis of Silicon Photodetectors in 4-Pi Sun Sensor of Aditya-L1 Mission

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Title On-Orbit Response Analysis of Silicon Photodetectors in 4-Pi Sun Sensor of Aditya-L1 Mission
 
Creator J, Sirisha
D, Bhavana
Maji, Amit
Gunjal, Ishan R
M A, Sumesh
Karanth, S P
 
Subject Silicon photodetectors
4piSS
Ionizing radiation
Aditya-L1
 
Description 267-273
Silicon photodetectors indigenously developed by Laboratory for Electro-Optics Systems (LEOS) have been used in 4-pi
sun sensors (4piSS) for space craft attitude determination. A performance analysis of these detectors during their latest flight
in the Aditya-L1 mission was carried out, wherein an unprecedented fall in sensor output was observed during the first seven
days of flight. The possibility of variation in sensor output due to effects of ionizing radiation in the inner Van Allen belts
during orbit raising is explored. The radiation environment encountered by the spacecraft during different stages of orbit
raising is studied and it is seen that the spacecraft orbit was completely inside the high intensity radiation zone during the
first seven days. Moreover, stabilization of the sensor output coincides with the third orbit-raising maneuver, during which
the spacecraft orbit was moved outside the high intensity region of the radiation belt. The cumulative proton fluence
experienced by the satellite during the initial stages was computed to be 2.6×1011 cm-2. This matches well with the proton
fluence required to cause the observed variation in photo response, as estimated using data from previous irradiation lab
experiments conducted on these photodetectors.
 
Date 2024-03-21T05:17:00Z
2024-03-21T05:17:00Z
2024-03
 
Type Article
 
Identifier 0975-0959 (Online); 0301-1208 (Print)
http://nopr.niscpr.res.in/handle/123456789/63615
https://doi.org/10.56042/ijpap.v62i4.7792
 
Language en
 
Publisher NIScPR-CSIR,India
 
Source IJPAP Vol.62(04) [April 2024]