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Recent Advances in Indium Selenide (InSe) based Photodetectors: A Mini Review

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Title Recent Advances in Indium Selenide (InSe) based Photodetectors: A Mini Review
 
Creator Mishra, Monu
Dhakla, Shweta
Deendyal, Parvesh K
Kumar, Manish
Kashyap, Manish K
 
Subject UV-Vis-IR
Photodectors
Graphene
Thin Film
 
Description 517-521
Indium Selenide (InSe) is an emerging two-dimensional (2D) layered metal monochalcogenide (MMC) material which is
highly regarded for its unique material properties. Due to the large surface area, high electron mobility and bandgap tunability
(Visible to IR), InSe is widely sought for polarization sensitive photodetection. In the recent years, InSe heterostructure based
broadband photodetectors (UV-Vis-IR) have received significant scientific attention. Photodetectors based on InSe layers/flakes
and their heterostructures (with oxides, graphene, TMDCs, etc.) have displayed ultrahigh efficiency, fast switching and selfpowered
operation. Till now, a record breaking photoresponsivity up to107 AW-1 with switching time less than 2 μs for InSe
based photodetector has been reported. Though, despite of scientific advancements, InSe based photodetectors suffer from
numerous technological challenges. Therefore, in this mini review, we present a systematic and comprehensive review of
noteworthy recent developments, scientific and technological challenges of InSe based optoelectronic devices. A brief
discussion on the future aspects of InSe based photodetectors has also been presented.
 
Date 2024-06-07T09:41:56Z
2024-06-07T09:41:56Z
2024-06
 
Type Article
 
Identifier 0975-0959 (Online); 0301-1208 (Print)
http://nopr.niscpr.res.in/handle/123456789/64044
https://doi.org/10.56042/ijpap.v62i6.8788
 
Language en
 
Publisher NIScPR-CSIR, India
 
Source IJPAP Vol.62(06) [June 2024]