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Improving On-state current and Ambipolarity of TFET using Gate-Drain and Gate Dielectric Engineering

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Title Improving On-state current and Ambipolarity of TFET using Gate-Drain and Gate Dielectric Engineering
 
Creator Avinash, Ganta
Saini, Gaurav
 
Subject Ambipolarity
Gate overlapping
TFET
Tunnelling barrier width
 
Description 607-613
This article presents the Gate Overlap on Drain with Hetero Gate Dielectric TFET (GDHD-TFET), a novel tunnel FET
structure aimed at addressing the low ON current and ambipolar leakage observed in traditional TFETs. By investigating the
combined effects of hetero gate dielectric and gate-drain overlapping, the GDHD-TFET offers a significant improvement in
design compared with conventional TFET design. Unlike traditional approaches that focus solely on regulating the tunnel
barrier widths at the channel-source junction, the GDHD-TFET simultaneously improves the tunnel barrier widths at both
channel-source and channel-drain junctions. As a result, the GDHD-TFET achieves remarkable improvements in ON current
and ambipolar conduction, surpassing traditional TFET performance by factors of 102 and 104, respectively. Furthermore, it
maintains low subthreshold swing (SS) of 29.3 mV/dec indicating its potential for low-power applications.
 
Date 2024-08-05T09:33:22Z
2024-08-05T09:33:22Z
2024-08
 
Type Article
 
Identifier 0975-0959 (Online); 0301-1208 (Print)
http://nopr.niscpr.res.in/handle/123456789/64312
https://doi.org/10.56042/ijpap.v62i7.7715
 
Language en
 
Publisher NIScPR-CSIR,India
 
Source IJPAP Vol.62(07) [July 2024]