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Growth, Characterization and Magneto-transport of single crystalline Bismuth

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Title Growth, Characterization and Magneto-transport of single crystalline Bismuth
 
Creator Kumar, Naveen
Karn, Navneet Kumar
Kushwaha, Pallavi
Awana, Veerpal Singh
 
Subject Crystal Growth
Topological Materials
Magneto-resistance
SdH Oscillations
 
Description 335-342
We report the growth of Bi single crystal via the modified Bridgman technique. The structural and microstructural
morphological characterization of the as-grown Bismuth (Bi) single crystal includes Field Emission Scanning Electron
Microscopy (FESEM), X-ray Diffractometer (XRD)and Energy Dispersive X-ray Analysis (EDAX). Additionally, the
Raman Spectra analysis has been used to study the vibrational modes of the Bi. The UV-Vis spectroscopy has revealed a
bulk band gap of approximately 5.23eV in the as-grown Bi crystal. The electrical transport measurements have
demonstrated metallic behavior with an R300K /R2K (RRR) ratio of around 6.5. However, under the applied field, the asgrown
Bi shows change from metallic to semiconducting behavior. The bulk band gap of the as-grown crystal has been
indirectly determined based on its semiconducting behavior under the applied magnetic field which increases with the
applied field. Notably, at low temperatures (
 
Date 2024-09-24T10:24:18Z
2024-09-24T10:24:18Z
2024-09
 
Type Article
 
Identifier 0975-1017 (Online); 0971-4588 (Print)
http://nopr.niscpr.res.in/handle/123456789/64585
https://doi.org/10.56042/ijems.v31i3.8874
 
Language en
 
Publisher NIScPR-CSIR,India
 
Source IJEMS Vol.31(3) June