Strain Engineering of Electronic, Optical and Photocatalytic Properties of MX2 (M=Mo, W and X=S, Se) Monolayers
NOPR - NISCAIR Online Periodicals Repository
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Title |
Strain Engineering of Electronic, Optical and Photocatalytic Properties of MX2 (M=Mo, W and X=S, Se) Monolayers
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Creator |
khan, Asim
khan, Muhammad Zahid Shah, Waseem Ullah Khan, Junaid Khan, Dil Faraz Ibrar, Muhammad Ahmad, Farhan Rehman, Fida |
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Subject |
DFT
MX2monolayer Electronic structure Photocatalytic Properties Optical properties |
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Description |
1022-1028
Strain engineering of electronic, structural, optical and photocatalytic properties of MX2 monolayers were investigated via density functional theoryby using the quantum espresso package. The structural, electronic and photocatalytic performance of MX2 monolayers (M=Mo,W and X=S,Se)with and without strain (tensile, compressive strain) was intensely studied. The monolayers WS2, WSe2, MoS2 and MoSe2showsdirect band gap. Further, these monolayers have semiconducting behaviors. The calculations were accomplished with the help of pseudo potential and plane wave method. Generalized gradient approximation(GGA) and DFT-D2 process of the said compounds give impressive results which may be useful for photo devices applications. |
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Date |
2024-11-01T10:06:00Z
2024-11-01T10:06:00Z 2024-11 |
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Type |
Article
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Identifier |
0975-0959 (Online); 0301-1208 (Print)
http://nopr.niscpr.res.in/handle/123456789/64803 https://doi.org/10.56042/ijpap.v62i11.12747 |
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Language |
en
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Publisher |
NIScPR-CSIR,India
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Source |
IJPAP Vol.62(11) [November 2024]
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